EPC2100

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of EPC2100

Part NumberEPC2100
ManufacturerEPC
DescriptionGAN TRANS ASYMMETRICAL HALF BRID
DatasheetsDownload EPC2100 Datasheet PDFPDF Icon
Price for EPC2100

Specification of EPC2100

Status
Active
Series
eGaN®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
EPC
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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