G3S12002D

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Overview of G3S12002D

Part NumberG3S12002D
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARBIDE 1.2KV 7A TO263
DatasheetsDownload G3S12002D Datasheet PDFPDF Icon
Price for G3S12002D

Specification of G3S12002D

Status
Active
Package
Cut Tape (CT),Tape & Box (TB)
Supplier
Global Power Technology-GPT
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
7A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 2 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
136pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263
Operating Temperature - Junction
-55C ~ 175C

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