G3S12003C

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Overview of G3S12003C

Part NumberG3S12003C
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARB 1.2KV 12A TO252
DatasheetsDownload G3S12003C Datasheet PDFPDF Icon
Price for G3S12003C

Specification of G3S12003C

Status
Active
Package
Cut Tape (CT),Tape & Box (TB)
Supplier
Global Power Technology-GPT
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 3 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 A @ 1200 V
Capacitance @ Vr, F
260pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252
Operating Temperature - Junction
-55C ~ 175C

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