NXPSC086506Q

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Overview of NXPSC086506Q

Part NumberNXPSC086506Q
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARB 650V 8A TO220AC
DatasheetsDownload NXPSC086506Q Datasheet PDFPDF Icon
Price for NXPSC086506Q

Specification of NXPSC086506Q

Status
Last Time Buy
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
230 A @ 650 V
Capacitance @ Vr, F
260pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Operating Temperature - Junction
175C (Max)

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