NXPSC06650X6Q

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Overview of NXPSC06650X6Q

Part NumberNXPSC06650X6Q
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARBIDE 650V 6A TO220F
DatasheetsDownload NXPSC06650X6Q Datasheet PDFPDF Icon
Price for NXPSC06650X6Q

Specification of NXPSC06650X6Q

Status
Last Time Buy
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 6 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 A @ 650 V
Capacitance @ Vr, F
190pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack, Isolated Tab
Supplier Device Package
TO-220F
Operating Temperature - Junction
175C (Max)

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